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L6227PD Scheda tecnica(PDF) 8 Page - STMicroelectronics

Il numero della parte L6227PD
Spiegazioni elettronici  DMOS DUAL FULL BRIDGE DRIVER WITH PWM CURRENT CONTROLLER
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6227PD Scheda tecnica(HTML) 8 Page - STMicroelectronics

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L6227
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CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6227 integrates two independent Power MOS
Full Bridges. Each Power MOS has an Rdson =
0.73ohm (typical value @ 25°C), with intrinsic fast
freewheeling diode. Cross conduction protection is
achieved using a dead time (td = 1
µs typical) be-
tween the switch off and switch on of two Power MOS
in one leg of a bridge.
Using N Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the
power
supply
voltage.
The
Bootstrapped
(VBOOT) supply is obtained through an internal Os-
cillator and few external components to realize a
charge pump circuit as shown in Figure 3. The oscil-
lator output (VCP) is a square wave at 600kHz (typi-
cal) with 10V amplitude. Recommended values/part
numbers for the charge pump circuit are shown in
Table1.
Table 1. Charge Pump External Components
Values
Figure 3. Charge Pump Circuit
LOGIC INPUTS
Pins IN1A, IN2B, IN1B and IN2B are TTL/CMOS and
uC compatible logic inputs. The internal structure is
shown in Fig. 4. Typical value for turn-on and turn-off
thresholds are respectively Vthon = 1.8V and Vthoff
= 1.3V.
Pins ENA and ENB have identical input structure with
the exception that the drains of the Overcurrent and
thermal protection MOSFETs (one for the Bridge A
and one for the Bridge B) are also connected to these
pins. Due to these connections some care needs to
be taken in driving these pins. The ENA and ENB in-
puts may be driven in one of two configurations as
shown in figures 5 or 6. If driven by an open drain
(collector) structure, a pull-up resistor REN and a ca-
pacitor CEN are connected as shown in Fig. 5. If the
driver is a standard Push-Pull structure the resistor
REN and the capacitor CEN are connected as shown
in Fig. 6. The resistor REN should be chosen in the
range from 2.2k
Ω to 180KΩ. Recommended values
for REN and CEN are respectively 100K
Ω and 5.6nF.
More information on selecting the values is found in
the Overcurrent Protection section.
Figure 4. Logic Inputs Internal Structure
Figure 5. ENA and ENB Pins Open Collector
Driving
Figure 6. ENA and ENB Pins Push-Pull Driving
CBOOT
220nF
CP
10nF
RP
100
D1
1N4148
D2
1N4148
D2
CBOOT
D1
RP
CP
VS
VSA
VCP
VBOOT
VSB
D01IN1328
5V
D01IN1329
ESD
PROTECTION
5V
5V
OPEN
COLLECTOR
OUTPUT
REN
CEN
ENA or ENB
D02IN1349
5V
PUSH-PULL
OUTPUT
REN
CEN
ENA or ENB
D02IN1350


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