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TLP763J Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLP763J Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page TLP763J 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ∆IF/°C -0.7 mA/°C Peak forward current (100 µs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Off -state output terminal voltage VDRM 600 V Ta = 25°C 100 On -state RMS current Ta = 70°C IT(RMS) 50 mA On -state current derating (Ta ≥ 25°C) ∆IT/°C -1.1 mA/°C Peak on -state current (100µs pulse, 120pps) ITP 2 A Peak nonrepetitive surge current (PW = 10 ms, DC = 10%) ITSM 1.2 A Junction temperature Tj 115 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -40~100 °C Lead soldering temperature (10s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H.≤ 60%) BVS 4000 Vrms Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 240 Vac Forward current IF 15 20 25 mA Peak on -state current ITP ― ― 1 A Operating temperature Topr -25 ― 85 °C |
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