TC55VEM208ASTN40 datasheet(9/11 Pages) TOSHIBA

Il numero della parte	TC55VEM208ASTN40

Spiegazioni elettronici	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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TC55VEM208ASTN40,55

2002-08-07

9/11

DATA RETENTION CHARACTERISTICS (Ta

==== −−−−40° to 85°C)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

VDH

Data Retention Supply Voltage

1.5



3.6

V

VDH = 3.6 V

Ta

= −40~85°C



10

Ta

= −40~40°C



2

IDDS2

Standby Current

VDH = 3.0 V

Ta

= −40~85°C



5

µA

tCDR

Chip Deselect to Data Retention Mode Time

0



ns

tR

Recovery Time

5



ms

CONTROLLED DATA RETENTION MODE

Note: When CE is operating at the VIH(min.) level, the operating current is given by IDDS1 during the transition

of VDD from 2.3(2.7) to 2.2V(2.4 V).

CE

VDD

2.3 V

GND

VIH

DATA RETENTION MODE

tR

(See Note)

tCDR

VDD − 0.2 V

CE

VDD

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