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SI7806DN Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte SI7806DN
Spiegazioni elettronici  N-Channel 30-V (D-S) Fast Switching MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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Si7806DN
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71869
S-20805—Rev. A, 17-Jun-02
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
1.0
3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 24 V, VGS = 0 V
1
m
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V, TJ = 55_C
5
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
40
A
a
VGS = 10 V, ID = 14.4 A
0.009
0.011
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 12.6 A
0.0145
0.0175
W
Forward Transconductancea
gfs
VDS = 15 V, ID = 14.4 A
34
S
Diode Forward Voltagea
VSD
IS = 3.2 A, VGS = 0 V
0.77
1.2
V
Dynamicb
Qg
VDS = 15 V, VGS = 4.5 V, ID = 14.4 A
8.5
11
Total Gate Charge
Qgt
19
24
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 10 V, ID = 14.4 A
3.6
nC
Gate-Drain Charge
Qgd
DS
GS
D
3.0
Gate-Resistance
Rg
2
W
Turn-On Delay Time
td(on)
8
15
Rise Time
tr
VDD = 15 V, RL = 15 W
12
20
Turn-Off Delay Time
td(off)
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
25
40
ns
Fall Time
tf
10
20
Source-Drain Reverse Recovery Time
trr
IF = 3.2 A, di/dt = 100 A/ms
35
70
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = 10 thru 4 V
25
_C
TC = 125_C
–55
_C
3 V
Output Characteristics
Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)


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