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SI7806DN Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7806DN Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si7806DN Vishay Siliconix New Product www.vishay.com 2 Document Number: 71869 S-20805—Rev. A, 17-Jun-02 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 m Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 40 A a VGS = 10 V, ID = 14.4 A 0.009 0.011 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 12.6 A 0.0145 0.0175 W Forward Transconductancea gfs VDS = 15 V, ID = 14.4 A 34 S Diode Forward Voltagea VSD IS = 3.2 A, VGS = 0 V 0.77 1.2 V Dynamicb Qg VDS = 15 V, VGS = 4.5 V, ID = 14.4 A 8.5 11 Total Gate Charge Qgt 19 24 Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 14.4 A 3.6 nC Gate-Drain Charge Qgd DS GS D 3.0 Gate-Resistance Rg 2 W Turn-On Delay Time td(on) 8 15 Rise Time tr VDD = 15 V, RL = 15 W 12 20 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 25 40 ns Fall Time tf 10 20 Source-Drain Reverse Recovery Time trr IF = 3.2 A, di/dt = 100 A/ms 35 70 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS = 10 thru 4 V 25 _C TC = 125_C –55 _C 3 V Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) |
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