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AD8041AR-REEL7 Scheda tecnica(PDF) 7 Page - Analog Devices |
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AD8041AR-REEL7 Scheda tecnica(HTML) 7 Page - Analog Devices |
7 / 18 page REV. B AD8041 –5– ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage ............................................................ 12.6 V Internal Power Dissipation 2 PDIP Package (N) .................................................... 1.3 W SOIC Package (R) .................................................... 0.9 W Input Voltage (Common Mode) ...................................... ± V S Differential Input Voltage ........................................... ± 3.4 V Output Short-Circuit Duration .......................................... Observe Power Derating Curves Storage Temperature Range N, R .............. –65 °C to +125°C Operating Temperature Range (A Grade) ... –40 °C to +85°C Lead Temperature Range (Soldering 10 sec) ............... 300 °C NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2Specification is for the device in free air: 8-Lead PDIP Package: θ JA = 90 °C/W. 8-Lead SOIC Package: θ JA = 155 °C/W. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD8041 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150 °C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175 °C for an extended period can result in device failure. While the AD8041 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction tem- perature (150 °C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves. AMBIENT TEMPERATURE ( C) 2.0 1.5 0 –50 90 –40 –30 –20 –10 0 10 20 30 50 60 70 80 40 1.0 0.5 8-LEAD PDIP PACKAGE 8-LEAD SOIC PACKAGE TJ = 150 C Figure 3. Maximum Power Dissipation vs. Temperature ORDERING GUIDE Temperature Package Package Model Range Description Options AD8041AN –40 °C to +85°C 8-Lead PDIP N-8 AD8041AR –40 °C to +85°C 8-Lead Plastic SOIC R-8 AD8041AR-REEL –40 °C to +85°C 13" Tape and Reel R-8 AD8041AR-REEL7 –40 °C to +85°C 7" Tape and Reel R-8 AD8041ARZ-REEL 1 –40 °C to +85°C 13" Tape and Reel R-8 5962-9683901MPA 2 –55 °C to +125°C 8-Lead CERDIP Q-8 NOTES 1The Z indicates a lead-free product. 2Refer to official DSCC drawing for tested specifications. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8041 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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