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SI-E3600-4 Scheda tecnica(PDF) 2 Page - Diotec Semiconductor |
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SI-E3600-4 Scheda tecnica(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page Si-E8000/3600-4 Characteristics Kennwerte Si-E8000/3600-4 Rated DC voltage Anschlussgleichspannung 1) VI = VVRMS V RD 3600 V Forward voltage Durchlass-Spannung Tj = 25°C IF = 4 A VF < 12 Typical junction capacitance Typische Sperrschichtkapazität VR = 4 V Cj 8 pF Reverse recovery time Sperrverzug IF = 0.5 A through/über IR = 1 A to IR = 0.25 A trr typ. 1500 ns Leakage current Sperrstrom Tj = 45°C VR = VRRM IR < 5 µA Leakage current Sperrstrom Tj = 150°C VR = VRRM IR < 1 mA Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Arithmetic average DC voltage at half-wave rectification and no-load Arithmetischer Mittelwert der Leerlaufgleichspannung bei Einweggleichrichtung 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 80 60 40 20 0 [%] I FAV Rated forward current versus ambient temperature Zul. Richtstrom in Abh. von der Umgebungstemp. [°C] T A 150 100 50 0 |
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