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TPA60R350C Scheda tecnica(PDF) 2 Page - Wuxi Unigroup Microelectronics Company |
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TPA60R350C Scheda tecnica(HTML) 2 Page - Wuxi Unigroup Microelectronics Company |
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2 / 12 page  TPP60R350C, TPA60R350C, TPU60R350C, TPD60R350C, TPC60R350C, TPB60R350C V3.0 www.tsinghuaicwx.com Wuxi Unigroup Microelectronics Company Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, ID = 250µA 600 -- -- V Zero Gate Voltage Drain Current I DSS V DS = 600V, VGS = 0V, TJ = 25º C -- -- 1 μA V DS = 600V, VGS = 0V, TJ = 150ºC -- -- 100 Gate-Source Leakage I GSS V GS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage V GS(th) V DS = VGS, ID = 250µA 2.5 -- 4 V Drain-Source On-Resistance (Note3) R DS(on) V GS = 10V, ID = 5.5A -- 0.30 0.35 Ω Forward Transconductance (Note3) g fs V DS = 10V, ID = 5.5A -- 7.8 -- S Dynamic Input Capacitance C iss V GS = 0V, V DS = 50V, f = 1.0MHz -- 901 -- pF Output Capacitance C oss -- 50 -- Reverse Transfer Capacitance C rss -- 5.5 -- Total Gate Charge Q g V DD = 480V, ID = 11A, V GS = 10V -- 21 -- nC Gate-Source Charge Q gs -- 4.5 -- Gate-Drain Charge Q gd -- 7 -- Turn-on Delay Time t d(on) V DD = 400V, ID = 11A, R G = 25Ω -- 41 -- ns Turn-on Rise Time t r -- 20 -- Turn-off Delay Time t d(off) -- 123 -- Turn-off Fall Time t f -- 6.4 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current I S T C = 25º C -- -- 9.2 A Pulsed Diode Forward Current I SM -- -- 29 Body Diode Voltage V SD T J = 25º C, I SD = 11A, VGS = 0V -- 0.9 1.2 V Reverse Recovery Time t rr V R = 480V, IF = IS, di F/dt = 100A/μs -- 280 -- ns Reverse Recovery Charge Q rr -- 2.8 -- μC Peak Reverse Recovery Current I rrm -- 17 -- A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. I AS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% 2 |
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