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TSM150P04LCS Scheda tecnica(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSM150P04LCS Scheda tecnica(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 6 page TSM150P04LCS Taiwan Semiconductor 3 Version: A1611 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage -VGS, Gate to Source Voltage (V) -VDS, Drain to Source Voltage (V) -ID, Drain Current (A) Qg, Gate Charge (nC) TJ, Junction Temperature (°C) -VGS, Gate to Source Voltage (V) 0 6 12 18 24 30 0 1 2 3 4 25℃ -55℃ 150℃ 0 6 12 18 24 30 0 1 2 3 4 V GS=-10V V GS=-7V V GS=-5V V GS=-4.5V V GS=-4V V GS=-3.5V V GS=-3V 0 2 4 6 8 10 0 10 20 30 40 50 V DS=-20V I D=-9A 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 V GS=-10V I D=-9A 0 0.01 0.02 0.03 0.04 0.05 3 4 5 6 7 8 9 10 I D=-9A 0 0.005 0.01 0.015 0.02 0.025 0.03 0 6 12 18 24 30 V GS=-10V V GS=-4.5V |
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