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TSM150P03PQ33 Scheda tecnica(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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TSM150P03PQ33 Scheda tecnica(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
4 / 6 page TSM150P03PQ33 Taiwan Semiconductor 4 Version: C1703 On-Resistance vs. Drain Current On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area, Junction-to-Case Normalized Thermal Transient Impedance, Junction-to-Case t, Square Wave Pulse Duration (sec) 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 SINGLE PULSE RӨJC=4.5°C/W Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 1 10 100 1000 0.1 1 10 100 -V DS, Drain to Source Voltage (V) R DS(ON) SINGLE PULSE RӨJC=4.5°C/W T C=25°C -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 0 0.005 0.01 0.015 0.02 0.025 0.03 0 6 12 18 24 30 V GS=-10V V GS=-4.5V 0 0.01 0.02 0.03 0.04 0.05 0.06 3 4 5 6 7 8 9 10 I D=-10A Notes: Duty = t 1 / t 2 T J = T C + P DM x Z ӨJC x RӨJC |
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