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TSM085P03CV Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Il numero della parte TSM085P03CV
Spiegazioni elettronici  Low gate charge for fast power switching
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Produttore elettronici  TSC [Taiwan Semiconductor Company, Ltd]
Homepage  http://www.taiwansemi.com
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TSM085P03CV Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSM085P03CV
Taiwan Semiconductor
1
Version: A1605
P-Channel Power MOSFET
-30V, -64A, 8.5m
Ω
FEATURES
● Low R
DS(ON) to minimize conductive losses
● Low gate charge for fast power switching
● 100% UIS and R
g tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● Load Switch
● BLDC Motor Drives
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
-30
V
RDS(on) (max)
VGS = -10V
8.5
m
Ω
VGS = -4.5V
14
Qg
27
nC
PDFN33
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
(Note 1)
TC = 25°C
ID
-64
A
TA = 25°C
-14
Pulsed Drain Current
IDM
-256
A
Single Pulse Avalanche Current
(Note 2)
IAS
-23
A
Single Pulse Avalanche Energy
(Note 2)
EAS
79
mJ
Total Power Dissipation
TC = 25°C
PD
50
W
TC = 125°C
10
Total Power Dissipation
TA = 25°C
PD
2.4
W
TA = 125°C
0.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
2.5
°C/W
Junction to Ambient Thermal Resistance
RӨJA
53
°C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.


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