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TSM7NC60CF Scheda tecnica(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM7NC60CF Scheda tecnica(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  TSM7NC60CF Taiwan Semiconductor 2 Version: A1605 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.5 4.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance (Note 4) VGS = 10V, ID = 2A RDS(on) -- 1.07 1.2 Ω Forward Transconductance (Note 4) VDS = 10V, ID = 4A gfs -- 5 -- S Dynamic (Note 5) Total Gate Charge VDS = 480V, ID = 4A, VGS = 10V Qg -- 24 -- nC Gate-Source Charge Qgs -- 7.2 -- Gate-Drain Charge Qgd -- 8.2 -- Input Capacitance VDS = 50V, VGS = 0V, f = 1.0MHz Ciss -- 1169 -- pF Output Capacitance Coss -- 62 -- Reverse Transfer Capacitance Crss -- 5 -- Gate Resistance f = 1.0MHz, open drain Rg 1 3.4 6.8 Ω Switching (Note 6) Turn-On Delay Time VDD = 300V, RG = 5Ω, ID = 4A, VGS = 10V td(on) -- 10.4 -- ns Turn-On Rise Time tr -- 17 -- Turn-Off Delay Time td(off) -- 20 -- Turn-Off Fall Time tf -- 27.6 -- Source-Drain Diode Forward Voltage (Note 4) IS = 4A, VGS = 0V VSD -- -- 1.3 V Reverse Recovery Time IS = 4A dIF/dt = 100A/μs trr -- 246 -- ns Reverse Recovery Charge Qrr -- 2 -- μC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 20mH, IAS = 5.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM7NC60CF C0G ITO-220S 50pcs / Tube |
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