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TS19721D Datasheet(Scheda tecnica) 2 Page - Taiwan Semiconductor Company, Ltd

Numero della parte TS19721D
Dettagli  Integrated 600V Power MOSFET
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Produttore  TSC [Taiwan Semiconductor Company, Ltd]
Homepage  http://www.taiwansemi.com
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TS19721D
Taiwan Semiconductor
Document Number: DS_P0000278
2
Version: A15
THERMAL PERFORMANCE (Note 3)
PARAMETER
SYMBOL
LIMIT
UNIT
Thermal Resistance - Junction to Case
RӨJC
106.6
oC/W
Thermal Resistance - Junction to Ambient
RӨJA
220
oC/W
RECOMMENDED OPERATING CONDITION (T
A = 25°C unless otherwise specified)
(Note 4)
PARAMETER
SYMBOL
LIMIT
UNIT
Power Supply Pin
VCC
33
V
RT Voltage to GND
VRT
-0.3 to 5
V
DRAIN Voltage to GND
VOUT
-0.3 to 620
V
CS Voltage to GND
VCS
-0.3 to 5
V
COM Voltage to GND
VCOM
-0.3 to 5
V
Operating Junction Temperature Range
TJ
-40 to +150
°C
Operating Ambient Temperature Range
TOPA
-40 to +85
°C
ELECTRICAL SPECIFICATIONS (T
A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNIT
Supply Voltage
Start-up Current
VCC(ST)
VCC= VUVLO(on) -1V
--
45
--
μA
Operating Current
IOPA
With 1nF load on out pin
--
2.1
2.6
mA
UVLO(off)
VUVLO(off)
7
8
9
V
UVLO(on)
VUVLO(on)
16
17.5
19
V
OVP Level on VCC Pin
VOVP
29
31
33
V
Voltage Feedback
Feedback Reference Voltage
VFB
0.196
0.2
0.204
V
Transconductance
GM
--
58
--
μS
Output Sink Current
IO-SINK
--
5.8
--
μA
Output Source Current
IO-SOURCE
--
5.8
--
μA
Current Sensing
CS Limit Voltage
VOCP
--
1.4
--
V
Open Loop Voltage
VOLP
CS Pin Open
--
5
--
V
Leading-Edge Blanking Time
LEBt
--
400
--
ns
Delay to Output
--
100
--
ns
Switching Frequency
Start Frequency
fSTR
3
4.5
6
kHz
Maximum On Time
TON(MAX)
14
--
--
μs
Thermal Section
(Note 5, 6)
Thermal Shutdown
--
150
--
°C
Thermal Shutdown Release
--
120
--
°C




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