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TLP921 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLP921 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 8 page TLP921 2002-04-03 2 Electrical and Optical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 20 mA ¾ 1.25 1.4 V Reverse current IR VR = 5 V ¾ ¾ 10 mA Peak emission wavelength lP IF = 20 mA ¾ 940 ¾ nm Dark current ID (ICEO) VCE = 24 V, IF = 0 ¾ ¾ 0.1 mA Peak sensitivity wavelength lP ¾ ¾ 870 ¾ nm Collector current IC VCE = 5 V, IF = 20 mA (Note 2) 580 ¾ 2600 mA Leakage current ILEAK VCE = 5 V, IF = 20 mA (Note 3) ¾ ¾ 120 mA Collector-Emitter saturation voltage VCE (sat) IF = 20 mA, IC = 0.3 mA ¾ 0.1 0.4 V Rise time tr VCE = 2 V, IC = 0.5 mA ¾ 38 90 Fall time tf RL = 1 kW, d = 8 mm (Note 4) ¾ 48 110 ms Note 2: The following drawings show condition and the layout of reflectors. Note 3: Measurement layout drawing for leakage current Note 4: Measurement circuit and waveforms for Switching time Evaporated surface of aluminum Evaporated aluminum glass 8 mm Sensor 1 mm VOUT IF tr 90% 10% tf Prism VCC VOUT RL IF 8 mm 7 mm 7 mm Right angle prism (material: BK7) Thickness:7 mm Sensor |
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