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TC58DVM82F1FT00 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TC58DVM82F1FT00 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 34 page TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 2003-01-24 3/34 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS VALUE SYMBOL RATING TC58DVxxxxx TC58DAxxxx unit VCC Power Supply Voltage 0.6~4.6 0.6~4.6 V VCCQ I/O port Power Supply Voltage 0.6~4.6 0.6~2.6 V VIN Input Voltage for Control pins 0.6~4.6 0.6~2.6 V VI/O Input/Output Voltage for I/O pins 0.6 V~VCCQ 0.3 V ( ≦ 4.6 V) 0.6 V~VCCQ 0.3 V ( ≦ 2.6 V) PD Power Dissipation 0.3 0.3 W Tsolder Soldering Temperature(10s) 260 260 °C Tstg Storage Temperature 55~150 55~150 °C Topr Operating Temperature 0~70 0~70 °C CAPACITANCE *(Ta =25°C, f= 1 MHz) SYMB0L PARAMETER CONDITION MIN MAX UNIT CIN Input VIN 0 V 10 pF COUT Output VOUT 0 V 10 pF * This parameter is periodically sampled and is not tested for every device. VCC I/O Control circuit Status register Address register Command register Column buffer Column decoder Data register Sense amp Memory cell array Control HV generator Logic control BY / RY I/O1 VSS I/O8 or I/O16 to WP CE CLE ALE WE RE BY / RY VCCQ |
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