TC55VEM316AXBN datasheet(7/14 Pages) TOSHIBA

Il numero della parte	TC55VEM316AXBN

Spiegazioni elettronici	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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7 / 14 page

TC55VEM316AXBN40,55

2002-07-23

7/14

AC TEST CONDITIONS

PARAMETER

TEST CONDITION

Input pulse level

0.2 V, VDD × 0.7 V + 0.2 V

tR, tF

1V / ns(Fig.1)

Timing measurements

VDD × 0.5

Reference level

VDD × 0.5

Output load

30 pF

+ 1 TTL Gate(Fig.2)

Fig.1 : Input rise and fall time

Fig.2 : Output load

Dout

30 pF

R2

VTM

R1

= 810 Ω

R2

= 1610 Ω

VTM = 2.3 V

GND

90%

1 V/ns

tR

10%

90%

10%

tF

VDD Typ

1 V/ns

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