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EC733612 Scheda tecnica(PDF) 1 Page - E-CMOS Corporation

Il numero della parte EC733612
Spiegazioni elettronici  30V, 11.6A N-Channel MOSFET
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Produttore elettronici  E-CMOS [E-CMOS Corporation]
Homepage  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC733612 Scheda tecnica(HTML) 1 Page - E-CMOS Corporation

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EC733612
30V、11.6A N-Channel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4J01N-Rev.F002
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(25℃)
11.6
A
ID(70℃)
9
A
IDM
50
A
Maximum Power Dissipation
PD
3.1
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Description
The EC733612 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Features and Benefits:
◆ VDS = 30V,ID =11.6A
RDS(ON)
< 17mΩ @ VGS=4.5V
RDS(ON)
< 12mΩ @ VGS=10V
◆ High Power and current handing capability
◆ Lead free product is acquired
◆ Surface Mount Package
Application
◆ PWM applications
◆ Load switch
◆ Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Thermal Resistance


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