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LF356 Scheda tecnica(PDF) 1 Page - National Semiconductor (TI) |
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LF356 Scheda tecnica(HTML) 1 Page - National Semiconductor (TI) |
1 / 23 page LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers General Description These are the first monolithic JFET input operational ampli- fiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Tech- nology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. Features Advantages n Replace expensive hybrid and module FET op amps n Rugged JFETs allow blow-out free handling compared with MOSFET input devices n Excellent for low noise applications using either high or low source impedance — very low 1/f corner n Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers n New output stage allows use of large capacitive loads (5,000 pF) without stability problems n Internal compensation and large differential input voltage capability Applications n Precision high speed integrators n Fast D/A and A/D converters n High impedance buffers n Wideband, low noise, low drift amplifiers n Logarithmic amplifiers n Photocell amplifiers n Sample and Hold circuits Common Features n Low input bias current: 30pA n Low Input Offset Current: 3pA n High input impedance: 10 12 Ω n Low input noise current: n High common-mode rejection ratio: 100 dB n Large dc voltage gain: 106 dB Uncommon Features LF155/ LF355 LF156/ LF256/ LF356 LF257/ LF357 (A V=5) Units j Extremely fast settling time to 0.01% 4 1.5 1.5 µs j Fast slew rate 5 12 50 V/µs j Wide gain bandwidth 2.5 5 20 MHz j Low input noise voltage 20 12 12 Simplified Schematic 00564601 *3pF in LF357 series. BI-FET™, BI-FET II™ are trademarks of National Semiconductor Corporation. December 2001 © 2001 National Semiconductor Corporation DS005646 www.national.com |
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