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RGS00TS65D Scheda tecnica(PDF) 2 Page - Rohm

Il numero della parte RGS00TS65D
Spiegazioni elettronici  650V 50A Field Stop Trench IGBT
Download  13 Pages
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Produttore elettronici  ROHM [Rohm]
Homepage  http://www.rohm.com
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RGS00TS65D Scheda tecnica(HTML) 2 Page - Rohm

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Data Sheet
RGS00TS65D
lThermal Resistance
lIGBT Electrical Characteristics (at T
j = 25°C unless otherwise specified)
VCE = 650V, VGE = 0V
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
°C/W
°C/W
Thermal Resistance Diode Junction - Case
Rθ(j-c)
-
-
1.17
Thermal Resistance IGBT Junction - Case
Rθ(j-c)
-
-
0.46
-
-
Unit
Min.
Typ.
Max.
μA
mA
Parameter
Symbol
Conditions
Values
V
Collector Cut - off Current
ICES
Collector - Emitter Breakdown
Voltage
BVCES
IC = 10μA, VGE = 0V
650
-
-
Tj = 25°C
Tj = 175°C
10
5
-
-
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
-
Gate - Emitter Threshold
Voltage
VGE(th)
VCE = 5V, IC = 2.5mA
5.0
6.0
Collector - Emitter Saturation
Voltage
VCE(sat)
IC = 50A, VGE = 15V
nA
7.0
V
V
Tj = 25°C
-
1.65
2.10
Tj = 175°C
-
2.15
-
±200
2/11
2016.07 - Rev.A


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