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PXT8050 Scheda tecnica(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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PXT8050 Scheda tecnica(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PXT8050 TRANSISTOR (NPN) FEATURES Compliment to PXT8550 MARKING: Y1 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W T Storage Temperature 150 ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA Emitter cut-off current ICEO VCE=20V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE(1) VCE=1V, IC=100mA 85 400 DC current gain hFE(2) VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 1 V Base-emitter positive favor voltage VBEF IB=1A 1.55 V Transition frequency fT VCE=10V,IC=50mA,f=30MHz 100 MHz output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF CLASSIFICATION OF hFE(1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 ℃ SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER SOT-89-3L Plastic-Encapsulate Transistors J Tstg Storage Temperature -55 ~150 ℃ RΘJA Thermal Resistance From Junction To Ambient 250 www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com E,Aug,2016 ℃/W |
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