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PXT3906 Scheda tecnica(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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PXT3906 Scheda tecnica(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors PXT3906 TRANSISTOR (PNP) FEATURES Compliment to PXT3904 Low current Low voltage MARKING: 2A MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -6 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 μA cut-off current EBO VEB=-6V,IC=0 -0.0 5 μA hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 300 hFE(4) VCE=-1V,IC=-50mA 60 DC current gain hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V Collector-emitter saturation voltage VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.65 -0.85 V Base-emitter saturation voltage VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz 250 MHz Collector capacitance Cc VCB=-5V,IE=0,f=1MHz 4.5 pF Emitter capacitance Ce VEB=-0.5V,IC=0,f=1MHz 10 pF Noise figure NF VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz, RS=1KΩ 4 dB Delay time td 35 nS Rise time tr 35 nS Storage time tS 225 nS Fall time tf IC=-10mA , IB1=-IB2= -1mA 75 nS SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER ICEX VCB=-30V, VBE(off)=-3V -0. 05 μA 1 2 3 www.cj-elec.com 1 B,Jun,2015 Tstg Storage Temperature -55-150 ℃ RθJA Thermal resistance from junction to ambient 25 0 ℃/W |
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