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STN4260 Scheda tecnica(PDF) 1 Page - Stanson Technology |
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STN4260 Scheda tecnica(HTML) 1 Page - Stanson Technology |
1 / 6 page STN4260 N Channel Enhancement Mode MOSFET 18A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN4260 2016. V1 DESCRIPTION STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 PART MARKING Y: Year Code A: Porduce Code P: Process Code FEATURE l 60V/10A, RDS(ON) = 11.5mΩ (Typ.) @VGS = 10V l 60V/8A, RDS(ON) = 12.5mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design |
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