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FDG6318P Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDG6318P Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDG6318P Rev C (W) Typical Characteristics 0 0.6 1.2 1.8 00.5 11.5 22.5 3 -VDS, DRAIN-SOURCE VOLTAGE (V) -3.5V -4.5V VGS = -10.0V -3.0V -6.0V -2.5V -2.0V 0.75 1 1.25 1.5 1.75 0 0.4 0.8 1.2 1.6 -ID, DRAIN CURRENT (A) VGS = -3.5V -5.0V -10.0V -4.5V -4.0V -6.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 255075 100 125 TJ, JUNCTION TEMPERATURE ( oC) ID = -0.5A VGS = -4.5V 0.2 0.6 1 1.4 1.8 024 68 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.25A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 0.6 1.2 1.8 0.511.522.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = -5V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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