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BU2508DF Scheda tecnica(PDF) 2 Page - NXP Semiconductors

Il numero della parte BU2508DF
Spiegazioni elettronici  Silicon Diffused Power Transistor
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2508DF Scheda tecnica(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 7.5 V; IC = 0 A
-
227
-
mA
BV
EBO
Emitter-base breakdown voltage
I
B = 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB = 7.5 V
-
33
-
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 4.5 A; IB = 1.12 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 4.5 A; IB = 1.7 A
-
-
1.1
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
-
13
-
h
FE
I
C = 4.5 A; VCE = 1 V
4
5.5
7.0
V
F
Diode forward voltage
I
F = 4.5 A
-
1.6
2.0
V
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E = 0 A; VCB = 10 V; f = 1 MHz
80
-
pF
Switching times (16 kHz line
I
Csat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
deflection circuit)
-V
BB = 4 V; (-dIB/dt = 0.6 A/µs)
t
s
Turn-off storage time
5.0
6.0
µs
t
f
Turn-off fall time
0.4
0.6
µs
Switching times (38 kHz line
I
Csat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;
deflectioin circuit)
-V
BB = 4 V; (-dIB/dt = 0.6 A/µs)
t
s
Turn-off storage time
4.7
5.7
µs
t
f
Turn-off fall time
0.25
0.35
µs
2 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.600


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