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FDG6318PZ Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDG6318PZ Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2003 Fairchild Semiconductor Corporation FDG6318PZ Rev. B Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = -4.5V) Drain-Source Diode Characteristics Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the center drain pad. RθJC is guaranteed by design while RθCA is determined by user’s board design. RθJA = 415 oC/W when mounted on a 1inch2 copper pad. Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -20 - - V IDSS Zero Gate Voltage Drain Current VGS = −16V , VGS = 0V - - -3 µA IGSS Gate to Source Leakage Current VGS = ±12V , VGS = 0V - - ±10 µA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -0.65 -0.9 -1.5 V rDS(ON) Drain to Source On Resistance ID = -0.5A, VGS = -4.5V - 580 780 m Ω ID = -0.4A, VGS = -2.5V - 910 1200 CISS Input Capacitance VDS = -10V, VGS = 0V, f = 1MHz -85.4 - pF COSS Output Capacitance - 24.9 - pF CRSS Reverse Transfer Capacitance - 8.83 - pF Qg(TOT) Total Gate Charge at -4.5V VGS = 0V to -4.5V VDD = -10V ID = -0.5A Ig = 1.0mA - 1.08 1.62 nC Qg(-2.5) Total Gate Charge at -2.5V VGS = 0V to -2.5V - 0.67 1.0 nC Qgs Gate to Source Gate Charge - 0.21 - nC Qgd Gate to Drain “Miller” Charge - 0.33 - nC tON Turn-On Time VDD = -10V, ID = -0.5A VGS = -4.5V, RGS = 120Ω - - 35 ns td(ON) Turn-On Delay Time - 10 - ns tr Rise Time - 13 - ns td(OFF) Turn-Off Delay Time - 40 - ns tf Fall Time - 24 - ns tOFF Turn-Off Time - - 96 ns VSD Source to Drain Diode Voltage ISD = -0.5A - -0.9 -1.2 V trr Reverse Recovery Time ISD = -0.5A, dISD/dt = 100A/µs- - 22 ns QRR Reverse Recovered Charge ISD = -0.5A, dISD/dt = 100A/µs- - 16 nC |
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