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FDG6318PZ Scheda tecnica(PDF) 5 Page - Fairchild Semiconductor |
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FDG6318PZ Scheda tecnica(HTML) 5 Page - Fairchild Semiconductor |
5 / 9 page ©2003 Fairchild Semiconductor Corporation FDG6318PZ Rev. B Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 12. Capacitance vs Drain to Source Voltage Figure 13. Gate Charge Waveforms for Constant Gate Currents Typical Characteristic (Continued) T A = 25°C unless otherwise noted 0.95 1.00 1.05 1.10 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 10 100 0.1 1 10 200 5 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 Qg, GATE CHARGE (nC) VDD = -10V ID = -0.5A ID = -0.1A WAVEFORMS IN DESCENDING ORDER: |
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