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BC109C Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte BC109C
Spiegazioni elettronici  NPN general purpose transistors
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC109C Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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1997 Sep 03
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
−−
15
nA
IE = 0; VCB = 20 V; Tj = 150 °C
−−
15
µA
IEBO
emitter cut-off current
IC = 0; VEB =5V
−−
50
nA
hFE
DC current gain
IC =10 µA; VCE =5V
BC107A; BC108A
90
BC107B; BC108B; BC109B
40
150
BC108C; BC109C
100
270
hFE
DC current gain
IC = 2 mA; VCE =5V
BC107A; BC108A
110
180
220
BC107B; BC108B; BC109B
200
290
450
BC108C; BC109C
420
520
800
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
90
250
mV
IC = 100 mA; IB =5mA
200
600
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA; note 1
700
mV
IC = 100 mA; IB = 5 mA; note 1
900
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 2
550
620
700
mV
IC = 10 mA; VCE = 5 V; note 2
−−
770
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
6
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
9
pF
fT
transition frequency
IC = 10 mA; VCB = 5 V; f = 100 MHz
100
−−
MHz
F
noise figure
IC = 200 µA; VCE =5V; RS =2kΩ;
f = 30 Hz to 15.7 kHz
BC109B; BC109C
−−
4dB
F
noise figure
IC = 200 µA; VCE =5V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
BC107A; BC108A
BC107B; BC108B; BC108C
−−
10
dB
BC109B; BC109C
−−
4dB


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