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UPD48576118F1 Scheda tecnica(PDF) 11 Page - Renesas Technology Corp |
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UPD48576118F1 Scheda tecnica(HTML) 11 Page - Renesas Technology Corp |
11 / 52 page µµµµPD48576118F1 R10DS0257EJ0101 Rev. 1.01 Page 11 of 51 Jan. 15, 2016 Remarks 1. IDD specifications are tested after the device is properly initialized. 0°C ≤ TC ≤ 95°C; 1.7 V ≤ VDD ≤ 1.9 V, 2.38 V ≤ VEXT ≤ 2.63 V, 1.4 V ≤ VDDQ ≤ VDD, VREF = VDDQ/2 2. tCK = tDK = MIN., tRC = MIN. 3. Input slew rate is specified in Recommended DC Operating Conditions and Recommended AC Operating Conditions. 4. IDD parameters are specified with ODT disabled. 5. Continuous data is defined as half the D or Q signals changing between HIGH and LOW every half clock cycles (twice per clock). 6. Continuous address is defined as half the address signals between HIGH and LOW every clock cycles (once per clock). 7. Sequential bank access is defined as the bank address incrementing by one ever tRC. 8. Cyclic bank access is defined as the bank address incrementing by one for each command access. For BL=4 this is every other clock. 9. CS# is HIGH unless a READ, WRITE, AREF, or MRS command is registered. CS# never transitions more than per clock cycle. |
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