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LM185H-1.2/883 Scheda tecnica(PDF) 4 Page - National Semiconductor (TI) |
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LM185H-1.2/883 Scheda tecnica(HTML) 4 Page - National Semiconductor (TI) |
4 / 11 page Thermal Resistance TO-92 TO-46 SO-8 SOT23 θ JA (junction to ambient) 180˚C/W (0.4" leads) 440˚C/W 165˚C/W 283˚C/W 170˚C/W (0.125" leads) θ JC (junction to case) N/A 80˚C/W N/A N/A Note 4: Parameters identified with boldface type apply at temperature extremes. All other numbers apply at TA =TJ = 25˚C. Note 5: Guaranteed and 100% production tested. Note 6: Guaranteed, but not 100% production tested. These limits are not used to calculate average outgoing quality levels. Note 7: The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating TMAX and TMIN, divided by TMAX −TMIN. The measured temperatures are −55˚C, −40˚C, 0˚C, 25˚C, 70˚C, 85˚C, 125˚C. Note 8: A military RETS electrical specification is available on request. Typical Performance Characteristics Reverse Characteristics Reverse Characteristics 00551813 00551814 Forward Characteristics Temperature Drift of 3 Representative Units 00551815 00551816 Reverse Dynamic Impedance Reverse Dynamic Impedance 00551817 00551818 www.national.com 4 |
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