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PDZV11A Scheda tecnica(PDF) 1 Page - Rohm |
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PDZV11A Scheda tecnica(HTML) 1 Page - Rohm |
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1 / 8 page  PDZV11A Zener Diode Data sheet ●Inner Circuit PD 1000 mW ●Features ●Inner Circuit High reliability Small power mold type ●Application ●Packaging Specifications Voltage regulation Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 ●Structure Basic Ordering Unit(pcs) 3000 Silicon Epitaxial Planar Taping Code TR Marking 11A ●Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Limits Unit Power dissipation PD 1000 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55 ～ 150 ℃ ●Characteristic (Ta = 25℃) Parameter Symbol Conditions Min. Typ. Max. Unit Zener Voltage VZ IZ=20mA 10.400 - 11.600 V Dynamic Impedance ZZ IZ=20mA - - 8 Ω Reverse Current IR VR=8.0V - - 10 μA VZ test time is 40ms. www.rohm.com © 2017 ROHMCo., Ltd. All rights reserved. 1/4 2017/04/07_Rev.001 |
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