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WFF7N65S Scheda tecnica(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF7N65S Scheda tecnica(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
2 / 6 page Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance WF WF WF WFF F F F7 7 7 7N N N N65S 65S 65S 65S 2/6 Electrical Characteristics(Tc=25℃ unless otherwise noted) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Drain cut -off current IDSS VDS=650,VGS=0V, Tj=25℃ Tj=125℃ - - - 10 1 - µA Drain -source breakdow nvoltage V(BR)DSS ID=250µA,VGS=0V 650 - - V Gate threshold voltage VGS(th) VDS=VGS,ID=250uA 2.5 3.5 4.5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=3.5A Tj=25℃ Tj=150℃ - - 0.51 1.2 0.57 - Ω Gate resistance RG f=1MHz,open drain - 0.4 - Ω Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 710 pF Reverse transfer capacitance Crss - 6 Output capacitance Coss - 470 Turn-on delay time td(on) VDD = 300V, ID = 3.5A RG = 12Ω, VGS=10V - 16 - ns Rise time tr - 13 - Turn-off delay time td(off) - 35 - Fall time tf - 7 - Gate to source charge Qgs VDD=480V,ID=3.5A, VGS=0 to 10 V - 4 - nC Gate to drain charge Q gd - 9 - Gate charge total Q g - 19 - Gate plateau voltage Vplateau - 5.8 - V Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Diode forward voltage VSD VGS=0 V, IF=3.5A - - 1.2 V Reverse recovery time trr VR=50 V, IF=7A, dIF/dt=100 A/μs - 290 - ns Reverse recovery charge Qrr - 3.4 - µc Peak reverse recovery current Irrm - 14 - A |
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