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UPC2745T Scheda tecnica(PDF) 1 Page - NEC |
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UPC2745T Scheda tecnica(HTML) 1 Page - NEC |
1 / 5 page 3 V, 2.7 GHz Si MMIC WIDEBAND AMPLIFIER UPC2745T NOISE FIGURE AND GAIN vs. FREQUENCY VCC = 3.0 V, ICC = 7.5 mA 10 12 8 6 0 1000 2000 3000 GS NF 7.0 6.5 6.0 5.5 Frequency, f (MHz) PART NUMBER UPC2745T PACKAGE OUTLINE TO6 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no signal) VCC = 3.0 V mA 5.0 7.5 10.0 VCC = 1.8 V mA 4.5 GS Small Signal Gain, f = 500 MHz, VCC = 3.0 V dB 9 12 14 f = 1000 MHz, VCC = 3.0 V dB 12 f = 2000 MHz, VCC = 3.0 V dB 11 f = 500 MHz, VCC = 1.8 V dB 7 fU1 Upper Limit Operating Frequency, VCC = 3.0 V GHz 2.3 2.7 VCC = 1.8 V GHz 1.8 PSAT Saturated Output Power, f = 500 MHz, VCC = 3.0 V dBm -4 -1 f = 1000 MHz, VCC = 3.0 V dBm -2.5 f = 2000 MHz, VCC = 3.0 V dBm -3.5 f = 500 MHz, VCC = 1.8 V dBm -11 NF Noise Figure, f = 500 MHz, VCC = 3.0 V dB 6 7.5 f = 1000 MHz, VCC = 3.0 V dB 5.5 f = 2000 MHz, VCC = 3.0 V dB 5.7 f = 500 MHz, VCC = 1.8 V dB 8 RLIN Input Return Loss, f = 500 MHz, VCC = 3.0 V dB 8 11 f = 1000 MHz, VCC = 3.0 V dB 13 f = 2000 MHz, VCC = 3.0 V dB 14 f = 500 MHz, VCC = 1.8 V dB 6.5 RLOUT Output Return Loss, f = 500 MHz, VCC = 3.0 V dB 2.5 5.5 f = 1000 MHz, VCC = 3.0 V dB 6.5 f = 2000 MHz, VCC = 3.0 V dB 8.5 f = 500 MHz, VCC = 1.8 V dB 6 ISOL Isolation, f = 500 MHz, VCC = 3.0 V dB 33 38 f = 1000 MHz, VCC = 3.0 V dB 33 f = 2000 MHz, VCC = 3.0 V dB 30 f = 500 MHz, VCC = 1.8 V dB 35 OIP3 SSB Output Third Order Intercept , f1 = 500 MHz, f2 = 510 MHz, VCC = 3.0 V dBm 7 f1 = 1000 MHz, f2 = 1010 MHz, VCC = 3.0 V dBm 5 f1 = 500 MHz, f2 = 502 MHz, VCC = 1.8 V dBm -5 RTH (J-A) Thermal Resistance (Junction to Ambient) Free Air °C/W 620 Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB °C/W 630 FEATURES • WIDE FREQUENCY RESPONSE: 2.7 GHz • LOW VOLTAGE OPERATION: 3 V NOMINAL (1.8 MIN) • LOW POWER CONSUMPTION: 22.5 mW TYP • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2745T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This device is suitable as a buffer amplifier for cellular and cordless telephone applications. Operating on a 3 volt supply (1.8 volt minimum) this IC is ideally suited for hand-held, portable designs. NEC's stringent quality assurance and test procedures en- sure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω) Note: 1.The gain at fU is 3 dB down from the gain at 100 MHz. California Eastern Laboratories |
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