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IDT70T633 Scheda tecnica(PDF) 11 Page - Integrated Device Technology |
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IDT70T633 Scheda tecnica(HTML) 11 Page - Integrated Device Technology |
11 / 27 page 11 IDT70T633/1S High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges Timing of Power-Up Power-Down Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE, CE, LB or UB. 2. Timing depends on which signal is de-asserted first CE, OE, LB or UB. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last: tAOE, tACE, tAA, tABE, or tBDD. 5. SEM = VIH. 6. CE = L occurs when CE0 = VIL and CE1 = VIH. CE = H when CE0 = VIH and/or CE1 = VIL. tRC R/ W CE ADDR tAA OE UB, LB 5670 drw 06 (4) tACE (4) tAOE (4) tABE (4) tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) (6) . (1) tLZ/tLZOB CE 5670 drw 07 tPU ICC ISB tPD 50% 50% . |
Codice articolo simile - IDT70T633_12 |
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Descrizione simile - IDT70T633_12 |
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