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FDC6000NZ Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

Il numero della parte FDC6000NZ
Spiegazioni elettronici  Dual N-Channel 2.5V Specified PowerTrench MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC6000NZ Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor

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FDC6000NZ RevE1 (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
trr
Diode Reverse Recovery Time
IF = 6.5 A, diF/dt = 100 A/µs
16
nS
Qrr
Diode Reverse Recovery Charge
4.3
nC
NOTES:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the
drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a)
68°C/W when
mounted on a 1in
2 pad
of 2 oz copper (Single
Operation).
b)
102°C/W when mounted
on a minimum pad of 2 oz
copper (Single Operation).
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Electrical characterization and datasheet limits was based on a single source configuration (pin 2 & 5 no connection).


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