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FDC6000NZ Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDC6000NZ Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDC6000NZ RevE1 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings trr Diode Reverse Recovery Time IF = 6.5 A, diF/dt = 100 A/µs 16 nS Qrr Diode Reverse Recovery Charge 4.3 nC NOTES: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 68°C/W when mounted on a 1in 2 pad of 2 oz copper (Single Operation). b) 102°C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Electrical characterization and datasheet limits was based on a single source configuration (pin 2 & 5 no connection). |
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