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2SD1040 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1040 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1040 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 1.5A 3.0 V ICBO Collector Base Cutoff Current VCB=150V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 7.0V; IC= 0 1.0 mA hFE -1 DC Current Gain IC= 5A ; VCE= 4V 35 200 hFE-2 DC Current Gain IC= 15A ; VCE= 4V 20 Switching times tr Rise Time VCC= 30V, IC= 15A , IB1= -IB2= 1.5A, 1.2 μ s ts Storage Time 3.0 μ s tf Fall Time 1.8 μ s |
Codice articolo simile - 2SD1040 |
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