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ST5100S Scheda tecnica(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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ST5100S Scheda tecnica(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
3 / 5 page SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N1588, Rev. A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • ST5100S Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units Forward Voltage Drop* VF1 @ 5A, Pulse, TJ = 25 °C 0.69 0.75 V VF2 @ 5A, Pulse, TJ = 125 °C 0.61 0.70 V Reverse Current* IR1 @VR = rated VR TJ = 25 °C 0.06 0.12 mA Reverse Current* IR2 @VR = rated VR TJ = 125 °C 2 18 mA Junction Capacitance CT @VR = 5V, TC = 25 °C fSIG = 1MHz 245 - pF Voltage Rate of Change dv/dt - - 10,000 V/ μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -55 to +150 °C Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Ambient RθJA DC operation 75 °C/W Approximate Weight wt - 0.08 g Case Style TO-277B |
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