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PZTA64 Scheda tecnica(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Il numero della parte PZTA64
Spiegazioni elettronici  TRANSISTOR (PNP)
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Produttore elettronici  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Homepage  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

PZTA64 Scheda tecnica(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

  PZTA64 Datasheet HTML 1Page - Jiangsu Changjiang Electronics Technology Co., Ltd  
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A,Nov,2010
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA64
TRANSISTOR (PNP)
FEATURES
Low Voltage and High Current
High Current Gain Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
V(BR)CES
IC=-0.1mA,IB=0
-30
V
Collector cut-off current
ICBO
VCB=-30V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-10V, IC=0
-100
nA
hFE(1)*
VCE=-5V, IC=-10mA
10000
DC current gain
hFE(2)*
VCE=-5V, IC=-100mA
20000
Collector-emitter saturation voltage
VCE(sat)*
IC=-100mA,IB=-0.1mA
-1.5
V
Base-emitter voltage
VBE*
VCE=-5V, IC=-100mA
-2
V
Transition frequency
fT
VCE=-5V,IC=-10mA, f=100MHz
125
MHz
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current
-500
mA
PC
Collector Power Dissipation
1
W
RθJA
Thermal Resistance From Junction To Ambient
125
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
SOT-223
1. BASE
2. COLLECTOR
3. EMITTER


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