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TP2522N8-G Scheda tecnica(PDF) 1 Page - Supertex, Inc

Il numero della parte TP2522N8-G
Spiegazioni elettronici  P-Channel Enhancement-Mode Vertical DMOS FET
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Produttore elettronici  SUTEX [Supertex, Inc]
Homepage  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP2522N8-G Scheda tecnica(HTML) 1 Page - Supertex, Inc

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Supertex inc.
Supertex inc.
www.supertex.com
Doc.# DSFP-TP2522
C081413
TP2522
TP5CW W = Code for week sealed
= “Green” Packaging
Features
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
General Description
This low threshold enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Pin Configuration
Product Marking
TO-243AA (SOT-89)
TO-243AA (SOT-89)
GATE
SOURCE
DRAIN
DRAIN
P-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BV
DSS
Drain-to-gate voltage
BV
DGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Ordering Information
Part Number
Package Option
Packing
TP2522N8-G
TO-243AA (SOT-89)
2000/Reel
Product Summary
BV
DSS/BVDGS
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
-220V
12Ω
-2.4V
-750mA
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Typical Thermal Resistance
Package
θ
ja
TO-243AA (SOT-89)
133OC/W
Package may or may not include the following marks: Si or


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