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MTB013N10RE3-0-UB-X Scheda tecnica(PDF) 4 Page - Cystech Electonics Corp. |
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MTB013N10RE3-0-UB-X Scheda tecnica(HTML) 4 Page - Cystech Electonics Corp. |
4 / 8 page CYStech Electronics Corp. Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. : 4/ 8 MTB013N10RE3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 20 40 60 80 100 02 46 8 10 VDS, Drain-Source Voltage(V) 10V,9V,8V,7V,6V,5V,4V 3V 3.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250 μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 1 10 100 0.1 1 10 100 ID, Drain Current(A) VGS=10V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 0 5 10 15 20 IDR, Reverse Drain Current(A) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 20 40 60 80 100 120 140 160 180 200 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS=10V, ID=20A RDS(ON)@Tj=25°C : 11.8mΩ typ. VGS, Gate-Source Voltage(V) ID=20A |
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