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LM136H-5.0/883 Scheda tecnica(PDF) 5 Page - National Semiconductor (TI) |
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LM136H-5.0/883 Scheda tecnica(HTML) 5 Page - National Semiconductor (TI) |
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5 / 12 page  Typical Performance Characteristics (Continued) Forward Characteristics 00571623 Application Hints The LM136-5.0 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the tempera- ture coefficient can be adjusted to optimize circuit perfor- mance. Figure 1 shows an LM136-5.0 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affect- ing the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry. If minimum temperature coefficient is desired, four diodes can be added in series with the adjustment potentiometer as shown in Figure 2. When the device is adjusted to 5.00V the temperature coefficient is minimized. Almost any silicon sig- nal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136-5.0. It is usually sufficient to mount the diodes near the LM136-5.0 on the printed circuit board. The abso- lute resistance of the network is not critical and any value from 2k to 20k will work. Because of the wide adjustment range, fixed resistors should be connected in series with the pot to make pot setting less critical. 00571609 FIGURE 1. LM136-5.0 with Pot for Adjustment of Breakdown Voltage (Trim Range = ±1.0V Typical) 00571610 FIGURE 2. Temperature Coefficient Adjustment (Trim Range = ±0.5V Typical) www.national.com 5 |
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