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BDY96D Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte BDY96D
Spiegazioni elettronici  isc Silicon NPN Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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BDY96D Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
BDY96D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 30mA; IB= 0
350
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB= 1.25A
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.4
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 4A; IB= 1.25A
1.6
V
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0
mA
hFE
DC Current Gain
IC= 2A; VCE= 5V
15
60
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V, f= 1.0MHz
10
MHz


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