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BDY82 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY82 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor BDY82 DESCRIPTION · Continuous Collector Current-IC= -4A · Collector Power Dissipation- : PC= 36W @TC= 25℃ · Complement to Type BDY80 APPLICATIONS · Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 36 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Codice articolo simile - BDY82 |
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Descrizione simile - BDY82 |
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