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BDY82 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY82 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor BDY82 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -35 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -35 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -10 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.05A -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V -0.9 V ICEO Collector Cutoff Current VCE= -20V; IB= 0 -10 mA ICBO Collector Cutoff Current VCB= -20V; IE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -5V 40 240 hFE-2 DC Current Gain IC= -1A; VCE= -5V 20 fT Current Gain-Bandwidth Product IC= -0.5A; VCE= -10V 3 MHz hFE-1 Classifications A B C 40-80 70-140 120-240 |
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