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BDY71X Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY71X Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BDY71X DESCRIPTION · Continuous Collector Current-IC= 4A · Collector Power Dissipation- : PC= 29W @TC= 25℃ APPLICATIONS · Designed for accordance with the requirements of BS, CECC and JAN,JANTX, JANTXV and JANS specifications。 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.0 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEX Collector-Emitter Voltage VBE= -1.5V 90 V VCER Collector-Emitter Voltage RBE= 100Ω 60 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
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