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BDY58S Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY58S Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BDY58S DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) · High Power Dissipation · Low Collector Saturation Voltage APPLICATIONS · LF signal power amplification. · High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 160 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 25 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ |
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