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BDY58S Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BDY58S
Spiegazioni elettronici  isc Silicon NPN Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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BDY58S Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BDY58S
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min)
·
High Power Dissipation
·
Low Collector Saturation Voltage
APPLICATIONS
·
LF signal power amplification.
·
High current fast switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
160
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
25
A
IB
Base Current-Continuous
6
A
PC
Collector Power Dissipation @TC=25℃
175
W
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200


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