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BDY58S Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY58S Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BDY58S ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 125 V V(BR)CBO Collector- Base Breakdown Voltage IC= 1mA ; IE= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.4 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 0.5 mA ICER Collector Cutoff Current VCE= 80V; RBE= 10Ω VCE= 80V; RBE= 10Ω; TC=100℃ 0.5 10 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.5 mA hFE-1 DC Current Gain IC= 10A ; VCE= 4V 20 60 hFE-2 DC Current Gain IC= 20A ; VCE= 4V 15 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V; f= 10MHz 7 MHz Switching Times ton Turn-On Time IC= 15A , IB = 1.5A, 1.0 μ s toff Turn-Off Time IC= 15A , IB1 = -IB2 = 1.5A, 2.0 μ s |
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