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BDY55X Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte BDY55X
Spiegazioni elettronici  isc Silicon NPN Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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BDY55X Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistors
BDY55X
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=30mA; IB= 0
60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
1.1
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 3.3A
2.5
V
VBE(on)
Base-Emitter On Voltage
IC= 4A; VCE= 4V
1.8
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
0.7
mA
ICEX
Collector Cutoff Current
VCE= 100V; VBE=-1.5V
VCE= 100V; VBE=-1.5V, TC=150℃
5.0
30
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
5.0
mA
hFE-1
DC Current Gain
IC= 4A; VCE= 4V
20
100
hFE-2
DC Current Gain
IC= 10A; VCE= 4V
10
fT
Current Gain-Bandwidth Product
IC= 1A; VCE= 4V; f=10MHz
10
MHz
Switching Times
ton
Turn-On Time
IC= 5A; IB= 1A
0.5
μ
s
toff
Turn-Off Time
IC= 5A; IB1= 1A; IB2= -0.5A
2.0
μ
s


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