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BDY55X Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY55X Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistors BDY55X ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A 2.5 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 30V; IB= 0 0.7 mA ICEX Collector Cutoff Current VCE= 100V; VBE=-1.5V VCE= 100V; VBE=-1.5V, TC=150℃ 5.0 30 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 4A; VCE= 4V 20 100 hFE-2 DC Current Gain IC= 10A; VCE= 4V 10 fT Current Gain-Bandwidth Product IC= 1A; VCE= 4V; f=10MHz 10 MHz Switching Times ton Turn-On Time IC= 5A; IB= 1A 0.5 μ s toff Turn-Off Time IC= 5A; IB1= 1A; IB2= -0.5A 2.0 μ s |
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