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SI1016X Scheda tecnica(PDF) 4 Page - Vishay Siliconix

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Spiegazioni elettronici  Complementary N and P-Channel 20-V (D-S) MOSFET
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Document Number: 71168
S-03104—Rev. A, 08-Feb-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
NCHANNEL
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
0123456
ID = 350 mA
1000
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
ID = 200 mA
TJ = 125_C
TJ = 25_C
TJ = 50_C
10
100
–0.3
–0.2
–0.1
–0.0
0.1
0.2
0.3
–50
–25
0
25
50
75
100
125
ID = 0.25 mA
Threshold Voltage Variance vs. Temperature
TJ – Temperature (_C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
–50
–25
0
25
50
75
100
125
IGSS vs. Temperature
TJ – Temperature (_C)
0
1
2
3
4
5
6
7
–50
–25
0
25
50
75
100
125
BVGSS vs. Temperature
TJ – Temperature (_C)
VGS = 4.5 V


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