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LM110J Scheda tecnica(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Il numero della parte LM110J
Spiegazioni elettronici  Voltage Follower
Download  16 Pages
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Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM110J Scheda tecnica(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
(Note 6)
Supply Voltage
g
18V
Power Dissipation (Note 1)
500 mW
Input Voltage (Note 2)
g
15V
Output Short Circuit Duration (Note 3)
Indefinite
Operating Temperature Range
LM110
b
55 Cto a125 C
LM210
b
25 Cto a85 C
LM310
0 Cto a70 C
Storage Temperature Range
b
65 Cto a150 C
Lead Temperature (Soldering 10 sec)
260 C
Soldering Information
Dual-In-Line Package
Soldering (10 sec)
260 C
Small Outline Package
Vapor Phase (60 sec)
215 C
Infrared (15 sec)
220 C
See AN-450 ‘‘Surface Mounting Methods and Their Effect
on Product Reliability’’ for other methods of soldering sur-
face mount devices
ESD rating to be determined
Electrical Characteristics (Note 4)
Parameter
Conditions
LM110
LM210
LM310
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Input Offset Voltage
TA e 25 C
15
40
15
40
25
75
mV
Input Bias Current
TA e 25 C
10
30
10
30
20
70
nA
Input Resistance
TA e 25 C1010
1012
1010
1012
1010
1012
X
Input Capacitance
15
15
15
pF
Large Signal Voltage
TA e 25 C VS e g15V
0999
09999
0999
09999
0999
09999
VV
Gain
VOUT e g10V RL e 8kX
Output Resistance
TA e 25 C
075
25
075
25
075
25
X
Supply Current
TA e 25 C
39
55
39
55
39
55
mA
Input Offset Voltage
60
60
10
mV
Offset Voltage
b
55 C s TA s a85 C6
6
m
V C
Temperature Drift
a
85 s TA s 125 C12
m
V C
0 C s TA s a70 C10
m
V C
Input Bias Current
10
10
10
nA
Large Signal Voltage
VS e g15V VOUT e g10V
0999
0999
0999
VV
Gain
RL e 10 kX
Output Voltage
VS e g15V RL e 10 kX
g
10
g
10
g
10
V
Swing (Note 5)
Supply Current
TA e 125 C
20
40
20
40
mA
Supply Voltage
g
5V s VS s g18V
70
80
70
80
70
80
dB
Rejection Ratio
Note 1
The maximum junction temperature of the LM110 is 150 C of the LM210 is 100 C and of the LM310 is 85 C For operating at elevated temperatures
devices in the HO8 package must be derated based on a thermal resistance of 165 CW junction to ambient or 22 CW junction to case The thermal resistance
of the dual-in-line package is 100 CW junction to ambient
Note 2
For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltage
Note 3
Continuous short circuit for the LM110 and LM210 is allowed for case temperatures to 125 C and ambient temperatures to 70 C and for the LM310 70 C
case temperature or 55 C ambient temperature It is necessary to insert a resistor greater than 2 kX in series with the input when the amplifier is driven from low
impedance sources to prevent damage when the output is shorted RS e 5k min 10k typical is recommended for dynamic stability in all applications
Note 4
These specifications apply for g5V s VS s g18V and b55 C s TA 125 C for the LM110 b25 C s TA s 85 C for the LM210 and 0 C s TA s 70 C for
the LM310 unless otherwise specified
Note 5
Increased output swing under load can be obtained by connecting an external resistor between the booster and V
b
terminals See curve
Note 6
Refer to RETS110X for LM110H LM110J military specifications
Application Hint
The input must be driven from a source impedance of typically 10 kX (5 kX min) to maintain stability The total source
impedance will be reduced at high frequencies if there is stray capacitance at the input pin In these cases a 10 kX resistor
should be inserted in series with the input physically close to the input pin to minimize the stray capacitance and prevent
oscillation
2


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