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1N23SD Scheda tecnica(PDF) 1 Page - American Microsemiconductor |
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1N23SD Scheda tecnica(HTML) 1 Page - American Microsemiconductor |
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1 / 1 page  S-X BAND POINT CONTACT MIXER DIODES Point Contact Diodes: Typical Performance Part Number 1N21C 1N21D 1N21E 1N21WE 1N21F 1N21G 1N21WG 1N416C 1N416D 1N416E 1N416F 1N416G Noise Figure 3.060 GHz LO = 1.0 mW RI = 100 Ohms MAX (dB) 8.5 7.5 7.0 7.0 6.0 5.5 5.5 8.5 7.5 7.0 6.5 6.0 VSWR 3.060 GHz LO = 1.0 mW RI = 100 Ohms MAX (Ratio) – – 1.5 1.5 1.3 1.3 1.3 1.5 1.3 1.3 1.3 1.3 IF Impedance 3.060 GHz LO = 1.0 mW RI = 100 Ohms MIN/MAX (Ohms) 325 - 465 325 - 465 350 - 450 350 - 450 350 - 450 350 - 450 350 - 450 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 Conversion Loss 3.060 GHz LO = 1.0 mW RI = 100 Ohms MAX (dB) – – – – – 5.0 5.0 – – 7.0 6.5 6.0 Case Style PS100 PS100 PS100 PS101 PS101 PS100 PS100 PS101 PS101 PS101 PS101 PS101 Part Number 1N23 1N23A 1N23B 1N23C 1N23D 1N23E 1N23WE 1N23F 1N23G 1N23WG 1N23H 1N415C 1N415D 1N415E 1N415F 1N415G 1N415H Noise Figure 9.375 GHz LO = 1.0 mW RI = 100 Ohms MAX (dB) 12.0 11.0 10.0 9.0 8.5 7.5 7.5 7.0 6.5 6.5 6.0 9.0 8.5 7.5 7.0 6.5 6.0 VSWR 9.375 GHz LO = 1.0 mW RI = 100 Ohms MAX (Ratio) – – 1.5 1.5 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.5 1.3 1.3 1.3 1.3 1.3 IF Impedance 9.375 GHz LO = 1.0 mW RI = 100 Ohms MIN/MAX (Ohms) 200 - 600 200 - 600 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 335 - 465 Conversion Loss 9.375 GHz LO = 1.0 mW RI = 100 Ohms MAX (dB) – – – – – 7.0 7.0 6.5 6.0 6.0 5.5 – – 7.0 6.5 6.0 5.5 Case Style PS100 PS100 PS100 PS100 PS100 PS100 PS101 PS100 PS101 PS101 PS100 PS101 PS101 PS101 PS101 PS101 PS101 Electrical Specifications Operating Temperature: Storage Temperature: Description Applications Packaging |
Codice articolo simile - 1N23SD |
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Descrizione simile - 1N23SD |
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