GS4288C09 datasheet(7/62 Pages) GSI

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GS4288C09 Scheda tecnica(PDF) 7 Page - GSI Technology

Il numero della parte	GS4288C09

Spiegazioni elettronici	32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II

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Produttore elettronici	GSI [GSI Technology]

Homepage	http://www.gsitechnology.com

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7 / 62 page

GS4288C09/18/36L

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.03 7/2014

7/62

4. tMRSC after the valid MRS, issues an AUTO REFRESH command to all 8 banks in any order (along with 1024 NOP

commands) prior to normal operation. As always, tRC must be met between any AUTO REFRESH and any subsequent

valid command to the same bank.

Notes:

It is possible to apply VDDQ before VDD. However, when doing this, the DQs, DM, and all other pins with an output driver, will

go High instead of tri-stating. These pins will remain High until VDD is at the same level as VDDQ. Care should be taken to

avoid bus conflicts during this period.

2. If V

(DC) on CK/CK can not be met prior to being applied to the LLDRAM II, placing a large external resistor from CS to VDD

is a viable option for ensuring the command bus does not receive unwanted commands during this unspecified state.

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
EUROQUARTZ limited	GS42	96Kb / 1P	11.4 x 9.6 x 2.5mm SMD Sine Wave VCXO
GTM CORPORATION	GS420SD	163Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE
E-Tech Electronics LTD	GS420SD	169Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A
GTM CORPORATION	GS421SD	150Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE
E-Tech Electronics LTD	GS421SD	155Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
GSI Technology	GS4576C09	2Mb / 62P	64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM (LLDRAM II)
	GS4576C36GL-25I	2Mb / 63P	576Mb CIO Low Latency DRAM (LLDRAM II)
	GS8256436GD-250I	431Kb / 35P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
	GS8256418GB-250I	431Kb / 35P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
	GS8256436GD-200IV	422Kb / 33P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
	GS8256436GB-200IV	422Kb / 33P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
	GS8256418GD-250I	431Kb / 35P	16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs
Micron Technology	MT49H8M36	1Mb / 49P	288Mb CIO Reduced Latency
Integrated Silicon Solu...	IS45S81600E	870Kb / 61P	16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
Integrated Silicon Solu...	IS42S81600E	934Kb / 61P	16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM

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